Improvement in a-Si:H properties by inert gas plasma treatment

Materials Research Society Symposium - Proceedings

Volumn 420, Issue , 1996, Pages 329-334

  Maruyama, E ^a   Hishikawa, Y ^a   Tanaka, M ^a   Kiyama, S ^a   Tsuda, S ^a  

^a SANYO ELECTRIC CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; COMPOSITION; HYDROGEN; INERT GASES; PHOTOCONDUCTIVITY; PHYSICAL PROPERTIES; PLASMA APPLICATIONS; SOLAR CELLS; SURFACE PHENOMENA; THIN FILMS;

HYDROGEN CONTENT; INERT GAS PLASMA TREATMENT; SURFACE REACTION;

AMORPHOUS FILMS;

EID: 0030400902     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-420-329     Document Type: Conference Paper

References (11)