Low-dislocation-density and low-residual-strain semi-insulating GaAs grown by Vertical Boat method

IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC

Volumn , Issue , 1996, Pages 275-278

  Kawase, T ^a   Hagi, Y ^a   Tatsumi, M ^a   Fujita, K ^a   Nakai, R ^a  

^a SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; COMPOSITION EFFECTS; COMPUTER SIMULATION; CRYSTAL GROWTH; DISLOCATIONS (CRYSTALS); ELECTRIC PROPERTIES; ELECTRIC RESISTANCE MEASUREMENT; RESIDUAL STRESSES; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; STRAIN;

DISLOCATION DENSITY; LINEAGE FORMATION; VERTICAL BOAT METHOD;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030400901     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)