High-resolution measurement of resistivity variations in power devices by the photoscanning method

Journal of the Electrochemical Society

Volumn 143, Issue 12, 1996, Pages 4105-4108

  Schulze, H J ^a   Ludge A ^b,c   Riemann, H ^b,c  

^a SIEMENS AG   (Germany)

^b LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

^c ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL IMPURITIES; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CONDUCTIVITY MEASUREMENT;

BLOCKING VOLTAGE REDUCTION; HIGH CARRIER LIFETIME; PHOTOSCANNING METHOD; POWER DEVICES; RESISTIVITY VARIATIONS;

SEMICONDUCTOR DEVICES;

EID: 0030400697     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837344     Document Type: Article

References (10)

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