Zeeman splitting of single semiconductor impurities in resonant tunneling heterostructures

Superlattices and Microstructures

Volumn 20, Issue 4, 1996, Pages 513-522

  Deshpande, M R ^a   Sleight, J W ^a,c   Reed, M A ^a   Wheeler, R G ^a   Matyi, R J ^b,d  

^a Yale University   (United States)

^b TEXAS INSTRUMENTS   (United States)

^c Digital Semiconductor   (United States)

^d University of Wisconsin Madison   (United States)

Author keywords

Electron tunneling rates; Resonant tunneling heterostructures; Spin g factor

Indexed keywords

SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; TUNNEL JUNCTIONS;

RESONANT TUNNEL HETEROSTRUCTURES; ZEEMAN SPLITTING;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0030400311     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.1996.0109     Document Type: Article

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