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Volumn 428, Issue , 1996, Pages 87-92
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Effect of the finite source material on electromigration performance of a novel interconnect test structure
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Author keywords
[No Author keywords available]
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Indexed keywords
RELIABILITY;
SEMICONDUCTING FILMS;
SEMICONDUCTOR DEVICE MODELS;
SEMICONDUCTOR DEVICE STRUCTURES;
FINITE SOURCE MATERIALS;
NOVEL INTERCONNECT TEST STRUCTURE;
ELECTROMIGRATION;
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EID: 0030400293
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1557/proc-428-87 Document Type: Conference Paper |
Times cited : (1)
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References (7)
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