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Volumn 428, Issue , 1996, Pages 87-92

Effect of the finite source material on electromigration performance of a novel interconnect test structure

Author keywords

[No Author keywords available]

Indexed keywords

RELIABILITY; SEMICONDUCTING FILMS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0030400293     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-428-87     Document Type: Conference Paper
Times cited : (1)

References (7)
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.