Light emission from a silicon quantum well

Applied Physics Letters

Volumn 69, Issue 27, 1996, Pages 4165-4167

  Steigmeier, E F ^a   Morf, R ^a   Grutzmacher D ^a   Auderset, H ^a   Delley, B ^a   Wessicken, R ^b  

^a PAUL SCHERRER INSTITUTE   (Switzerland)

^b ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; CRYSTALLINE MATERIALS; CRYSTALLIZATION; INTERFACES (MATERIALS); PASSIVATION; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON; SEMICONDUCTOR QUANTUM WELLS; SILICON NITRIDE;

CRYSTALLINE SILICON; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

LIGHT EMISSION;

EID: 0030400256     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116973     Document Type: Article

References (14)

1. See, e.g., Microcrystalline and Nanocrystalline Semiconductors, MRS Proceedings Series 358, edited by R. W. Collins, Ch. Ch. Tsai, M. Hirose, F. Koch, and L. Brus (Materials Research Society, Pittsburgh, 1995).
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6. B. Delley and E. F. Steigmeier, Appl. Phys. Lett. 67, 2370 (1995).
7. 2.
8. The concentration x was determined by Rutherford backscattering and the hydrogen content from elastic recoil detection analysis.
9. The top layer is glue, necessary for making TEM samples.
10. For geometry (1), absorption in the Si QW is 45% for 5 and 46% for P polarization, while reflection is 25% and 16%, respectively. The remainder is absorbed in the Si substrate.
11. L. Tsybeskov and P. M. Fauchet, Appl. Phys. Lett. 64, 1983 (1994).
12. F. Koch, V. Petrova-Koch, and T. Muschik, J. Lumin. 57, 271 (1993).
13. See Fig. 6 in D. Grützmacher, E. F. Steigmeier, H. Auderset, R. Morf, B. Delley, and R. Wessicken, p. 833 in Ref. 1.
14. As the grain size in the Si layers is rather small, it may be more appropriate to use the energy gap of roughly spherical Si clusters (see Ref. 6), which is ≈2.0 eV for a diameter of 3 nm.