Defect reduction in ZnMgSSe epilayers on GaAS by using ZnMgSe/ZnSSe strained-layer superlattices

Solid State Communications

Volumn 100, Issue 12, 1996, Pages 817-820

  Kim, J S ^a   Sun, S H ^a   Kim, C H ^b   Chung, S J ^b  

^a Korea Institute of Science and Technology   (South Korea)

^b Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); STRAIN; STRESS ANALYSIS; SURFACE PROPERTIES; TRANSMISSION ELECTRON MICROSCOPY;

STRAINED LAYERS;

SEMICONDUCTOR SUPERLATTICES;

EID: 0030399319     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(96)00521-2     Document Type: Article

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