The Impact of the Floating-Body Effect Suppression on SOI Integrated Circuits

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1996, Pages 855-858

  Terauchi, Mamoru ^a   Nishiyama, Akira ^a   Mizuno, Tomohisa ^a   Yoshimi, Makoto ^a   Watanabe, Shigeyoshi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; TIMING CIRCUITS; ENERGY GAP; LSI CIRCUITS; MOSFET DEVICES;

BAND GAP ENGINEERING; CHARACTERISTIC FLUCTUATIONS; DC TRANSFER; ENGINEERING TECHNIQUES; FABRICATION TECHNIQUE; FLOATING BODY EFFECT; SOI CMOS CIRCUITS; SOI DEVICES; SOI-MOSFETS; TRANSFER CHARACTERISTICS;

MOSFET DEVICES; CMOS INTEGRATED CIRCUITS;

BANDGAP ENGINEERING TECHNIQUE; DC TRANSFER CHARACTERISTICS; FLOATING BODY EFFECTS;

EID: 0030399250     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1996.554114     Document Type: Conference Paper

References (7)

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