Residual stress and in-situ thermal stress measurement of aluminum film deposited on silicon wafer

Thin Solid Films

Volumn 290-291, Issue , 1996, Pages 248-253

  Kusaka, K ^a   Hanabusa, T ^a   Nishida, M ^b   Inoko, F ^a  

^a UNIVERSITY OF TOKUSHIMA   (Japan)

^b Politechnic College   (Japan)

Author keywords

Aluminium; Internal stress; Stress migration; X ray stress measurement

Indexed keywords

ALUMINUM; ANNEALING; COMPRESSIVE STRENGTH; PASSIVATION; RESIDUAL STRESSES; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS; STRESS ANALYSIS; TENSILE STRENGTH; THERMAL STRESS; THIN FILMS; X RAY ANALYSIS;

THERMAL STRESS MEASUREMENT;

METALLIC FILMS;

EID: 0030399210     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)09056-6     Document Type: Article

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