Effects of impurity codoping on the electrical properties of erbium ions in crystalline silicon

Materials Research Society Symposium - Proceedings

Volumn 422, Issue , 1996, Pages 113-118

  Libertino, S ^a   Coffa, S ^a   Mosca, R ^a   Gombia, E ^a  

^a UNIVERSITY OF CATANIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; COMPLEXATION; CRYSTALLINE MATERIALS; DOPING (ADDITIVES); ELECTRON ENERGY LEVELS; ION IMPLANTATION; OXYGEN; SEMICONDUCTOR DOPING; SILICON;

CARRIER LIFETIME; CRYSTALLINE SILICON; DEEP LEVEL SPECTRA; ERBIUM IONS; ERBIUM OXYGEN COMPLEXES; IMPURITY CODOPING;

ERBIUM;

EID: 0030398886     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-422-113     Document Type: Conference Paper

References (15)