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Volumn 1, Issue , 1996, Pages 24-27
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Charge trapping in thin SiO2 layers. Application to the breakdown of MOS
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Author keywords
[No Author keywords available]
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Indexed keywords
CURRENT DENSITY;
DIELECTRIC MATERIALS;
DIELECTRIC RELAXATION;
ELECTRIC BREAKDOWN OF SOLIDS;
ELECTRIC FIELD EFFECTS;
ELECTRIC SPACE CHARGE;
ELECTRONS;
SEMICONDUCTING SILICON COMPOUNDS;
THIN FILMS;
CHARGE DETRAPPING;
CHARGE TRAPPING;
THIN SILICON DIOXIDE LAYERS;
MOS DEVICES;
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EID: 0030398856
PISSN: 00849162
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
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Times cited : (2)
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References (9)
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