Chemical beam epitaxy of GaNxP1-x using a N radical beam source

Materials Research Society Symposium - Proceedings

Volumn 423, Issue , 1996, Pages 317-322

  Li, N Y ^a   Tomich, D H ^a   Wong, W S ^a   Solomon, J S ^a   Tu, C W ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BEAM EPITAXY; COMPOSITION; CRYSTAL ORIENTATION; FILM GROWTH; NITRIDES; NITROGEN; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES; THERMAL EFFECTS; TWINNING;

RADICAL BEAM FLUX; RADICAL BEAM SOURCE; TERTIARYBUTYLPHOSPHINE; TRIETHYLGALLIUM;

SEMICONDUCTING FILMS;

EID: 0030398780     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (15)