Growth conditions of erbium-oxygen-doped silicon grown by MBE

Materials Research Society Symposium - Proceedings

Volumn 422, Issue , 1996, Pages 15-20

  Stimmer, J ^a   Reittinger, A ^a   Abstreiter, G ^a   Holzbrecher, H ^a   Buchal, Ch ^a  

^a TECHNICAL UNIVERSITY OF MUNICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; OXYGEN; PHOTODIODES; PHOTOLUMINESCENCE; RARE EARTH ELEMENTS; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SILICON; SURFACE PROPERTIES;

ERBIUM OXYGEN DOPED SILICON;

ERBIUM;

EID: 0030398735     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-422-15     Document Type: Conference Paper

References (8)