High-temperature switching characteristics of 6H-SiC thyristor

Materials Research Society Symposium - Proceedings

Volumn 423, Issue , 1996, Pages 93-98

  Xie, K ^a   Flemish, J R ^a   Burke, T ^a   Buchwald, W R ^a   Zhao, J H ^a  

^a U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; HIGH TEMPERATURE EFFECTS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR SWITCHES; SILICON CARBIDE;

BREAKOVER VOLTAGE; PULSE BIAS CONDITIONS;

THYRISTORS;

EID: 0030398529     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-423-93     Document Type: Conference Paper

References (13)