A Novel TiN/Ti Contact Plug Technology for Gigabit Scale DRAM using Ti-PECVD and TiN-LPCVD

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1996, Pages 361-364

  Ohto, K ^a   Urabe, K ^a   Taguwa, T ^a   Chikaki, S ^a   Kikkawa, T ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; LEAKAGE CURRENTS; PLASMA CVD; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; TIN; TITANIUM NITRIDE; CHEMICAL VAPOR DEPOSITION; ELECTRIC RESISTANCE; LOW TEMPERATURE OPERATIONS; PLASMA APPLICATIONS; RANDOM ACCESS STORAGE; TITANIUM; X RAY PHOTOELECTRON SPECTROSCOPY;

ASPECT-RATIO; CONTACT HOLES; LOW-PRESSURE CHEMICAL VAPOR DEPOSITION; TI CONTACTS;

LOW PRESSURE CHEMICAL VAPOR DEPOSITION; ELECTRIC CONTACTS;

CONTACT PLUGS; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; X RAY FLOURESCENCE ANALYSIS;

EID: 0030398357     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1996.553603     Document Type: Conference Paper

References (16)

1. K Mori, M Akazaa, Mhasaki, H Ito. K Tsukamoto and Y Akasala. International Conference on Solid State Devices and Matenals. 1991. p210
2. T Akahon. T Murakami and Y Monoha. VLSI Multilevel Interconnectlon Cod . IEEE. 1993. p405
3. M S Ameen. J T Hilhian. J Faguet. R F Foster. C Arena and F Marbn. Advanced Metallizabonfor ULSI Applicabon MRS. 1994,p269
4. A Weber. R. Nihulshi. C -P Klages. M E Gross. R M Charatan. R L Opilan and W L Brown. Appl Surf Sci 91. 1995. p314
5. N Yokoyama Kode. and Y Homma. J Electrcchem Soc, 136(3). 1989.p882
6. F Pmtchovsh. Tmte E, Tram P J Tobm. and J E Pnce. MRS Workshopfor Tungsten and Other Refiactory Metals for VLSI Applicahons IV..MRS. 1989,p275
7. N J Ianno, AU Ahmed and D E. Englebert. J. Electochem. Soc,136, 1989.p276
8. I. J Raaijmahers and A Sherman VLSI Multilevel Interconnection C o d . IEEE, 1990. p219
9. J T Hillman, M J Rm Jr., D Smvas, E C. Eichman, W M Tnggs, Bsomer. M Churle): and C Bell. Advanced Metallmhon for ULSI Apphcahons.MRS. 1992.p311
10. T Suzula. T Ohba. Y Fmura and H Tsuhkawa. VLSI Multilevel Interconnection Cod . IEEE. 1993. p. 4-18
11. R M FLXR, G Gordon and D M Hofenan. Chem Master. 1990.2. p235
12. G S Sandhu, S G MedJe. and T T Doan. AppI Phys, Lett 62(3). IS January. 1993. p240
13. K Ohto, K Ueno, K Tsunman, K Numajm, M Okamura and H Jmba, AdvancedMetdhzahonforULSI Applicahons MRS,1993. p15 1
14. A. Intemann, H Koemer, G Ruhl, K Hieber and E Harhnann. Advanced Metallizahonfor ULSI Applications. MRS. 1994,p209
15. R L. Jackson, E J Mcnemey, B Roberts, J Shupp, A. Velaga S Pate1and L Halliday. Advanced Metalhzahon for ULSI Apphcahons, MRS. 1994, p223
16. G A Dlut, M K Jm, M F Chsholm, T Weaver, R H Have, K A. Littau, M Elmberg, S Ghanajem, H Tran, Y. Maeda, M. Gang and A. Smha. AdvancedMetallizahonfor ULSI Applicahons. bf&. 1994,p239