Effect of thermal cycling on stresses in thin silicon nitride and silicon carbide films

Journal of Materials Science Letters

Volumn 15, Issue 24, 1996, Pages 2177-2179

  Lim, C W ^a   Toh, C C ^a   Fu, J K ^b   Lahiri, S K ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b Singapore Institute of Standards and Industrial Research   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; PLASMA APPLICATIONS; SILICON CARBIDE; SILICON NITRIDE; STRESSES; TENSILE STRENGTH; THERMAL CYCLING; THERMAL EFFECTS; THIN FILMS;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD);

DIELECTRIC FILMS;

EID: 0030397632     PISSN: 02618028     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF00241161     Document Type: Article

References (10)

1. D. S. CAMPBELL, "Handbook of thin film technology" (McGraw-Hill, New York, 1970) p. 12.
2. R. W. HOFFMAN, "Physics of nonmetallic thin films" (Plenum Press, New York, 1976) p. 273.
3. F. M. D'HEURLE, Int. Mater. Rev. 34 (1989) 53.
4. S. K. LAHIRI, in Proceedings of the IEEE International Workshop on Memory Technology, Design and Testing, edited by R. Rojsuman, San Jose, California (IEEE, San Jose, CA, 1994) p. 22.
5. R. C. BUDHANI, R. F. BUNSHAH and P. A. FLINN, Appl. Phys. Lett. 52 (1988) 284.
6. L. L. HENCH and J. K. WEST, "Principles of electronic ceramics" (Wiley, New York, 1990) p. 112.
7. N. N. DAVIDENKOV, Soy. Phys. Solid St. 2 (1961) 2595.
8. P. A. FLINN, in Proceedings of the MRS Symposium on Thin Films: Stresses and Mechanical Properties (Materials Research Society, Pittsburgh, Pennsylvania, 1988) p. 41.
9. C. T. LYNCH (editor) "CRC handbook on materials science", Vol. III (CRC Press, Boca Raton, Florida, 1975) p. 379.
10. A. C. ADAMS, in "Dielectric and polysilicon film deposition, VLSI technology", edited by S. M. Sze (McGraw-Hill, New York, 1988) p. 264.