Oval defect classification in MBE-grown GaAs depending on growth conditions

Electron Technology (Warsaw)

Volumn 29, Issue 2-3, 1996, Pages 147-150

  Klima, K ^a   Kaniewska, M ^a   Reginski, K ^a   Muszalski, J ^a  

^a Department of Micro and Nanotechnology of Wide Bandgap Semiconductors   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; DENSITY (SPECIFIC GRAVITY); MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SILICON; SUBSTRATES; THERMAL EFFECTS;

GROWTH PARAMETERS; OVAL DEFECTS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030397451     PISSN: 00709816     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (15)