New approach to p-doping and the observation of efficiency enhancement in InP/InGaAs quantum well solar cells

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 1996, Pages 113-116

  Zacnariou, A ^a   Barnham, K W J ^a   Griffin, P ^a   Nelson, J ^a   Button, C ^a   Hopkinson, M ^a   Pate, M ^a   Epler, J ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENT MEASUREMENT; ENERGY GAP; HETEROJUNCTIONS; MATHEMATICAL MODELS; PHOTOELECTRICITY; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SOLAR CONCENTRATORS;

INDIUM GALLIUM ARSENIDE; MONOCHROMATIC PHOTOCURRENT; P-DOPING; SPECTRAL RESPONSE;

SOLAR CELLS;

EID: 0030397264     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)