High-quality polycrystalline silicon layers grown on dissimilar substrates from metallic solution

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 1996, Pages 681-684

  Silier, I ^a   Konuma, M ^a   Gutjahr, A ^a   Bauser, E ^a   Banhart, F ^a   Zizler, C ^a   Schoellkopf, V ^a   Frey, H ^a  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COALESCENCE; CRYSTAL ORIENTATION; DEPOSITION; ELECTRIC PROPERTIES; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; ION BEAMS; LIQUID PHASE EPITAXY; PLASMAS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTOR GROWTH; SUBSTRATES;

GLASSY CARBON; METALLIC SOLUTION; PHOTOVOLTAIC APPLICATION; POLYCRYSTALLINE SILICON; QUARTZ GLASS;

SEMICONDUCTING SILICON;

EID: 0030397233     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/pvsc.1996.564221     Document Type: Conference Paper

References (6)