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Volumn 403, Issue , 1996, Pages 315-320
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Effect of the grain growth process on the characteristics for the excimer laser crystallized poly-Si thin film transistors
a
a
NEC CORPORATION
(Japan)
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Author keywords
[No Author keywords available]
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Indexed keywords
CRYSTAL DEFECTS;
CRYSTALLIZATION;
EFFECTS;
EXCIMER LASERS;
GRAIN BOUNDARIES;
POLYCRYSTALLINE MATERIALS;
SCANNING ELECTRON MICROSCOPY;
SEMICONDUCTING SILICON;
STRUCTURE (COMPOSITION);
THIN FILMS;
TRANSISTORS;
TRANSMISSION ELECTRON MICROSCOPY;
ENERGY DENSITY;
INTRAGRAIN DEFECTS;
SECONDARY GRAIN GROWTH;
GRAIN GROWTH;
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EID: 0030396890
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
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Times cited : (3)
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References (12)
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