New model for 'stretched exponential' relaxation

Materials Research Society Symposium - Proceedings

Volumn 420, Issue , 1996, Pages 533-538

  Van De Walle, Chris G ^a  

^a PALO ALTO RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; DIFFUSION; ELECTRON ENERGY LEVELS; MATHEMATICAL MODELS; RELAXATION PROCESSES;

HYDROGEN ATOM; HYDROGEN TRAPPING; STRETCHED EXPONENTIAL RELAXATION;

AMORPHOUS SILICON;

EID: 0030396842     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)