Capacitance behavior of GaAs-MIS structures with low-temperature grown GaAs dielectric

Journal of Electronic Materials

Volumn 25, Issue 12, 1996, Pages 1832-1836

  Luo, J K ^a,b   Westwood, D ^a   Thomas, H ^a   Morgan, D V ^a  

^a CARDIFF UNIVERSITY   (United Kingdom)

^b Newport Wafer Fab Ltd   (United Kingdom)

Author keywords

Admittance spectroscopy; Capacitance voltage (C V); Interface potential; Low temperature grown GaAs; Metal dielectric semiconductor; Molecular beam epitaxy (MBE)

Indexed keywords

CAPACITANCE; ELECTRIC IMPEDANCE; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SPECTROSCOPY;

INTERFACE POTENTIAL;

MIS DEVICES;

EID: 0030395927     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02657161     Document Type: Article

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