Light bias CPM study of the density of states in N-type amorphous silicon

Materials Research Society Symposium - Proceedings

Volumn 420, Issue , 1996, Pages 703-708

  Unold, Thomas ^a   Branz, Howard M ^a   Vanecek, Milan ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; AMPLIFICATION; ELECTRONS; LIGHT ABSORPTION; MONOCHROMATORS; OPTICAL VARIABLES MEASUREMENT; SPECTRUM ANALYSIS;

CONSTANT PHOTOCURRENT METHOD; ELECTRON CAPTURE CROSS SECTION; LIGHT BIAS; PHOTOEXCITATION;

ELECTRONIC DENSITY OF STATES;

EID: 0030395188     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-420-703     Document Type: Conference Paper

References (7)