Field emission and band bending considerations from high-quality NEA diamond

Materials Research Society Symposium - Proceedings

Volumn 423, Issue , 1996, Pages 771-776

  Bandis, C ^a   Pate, B B ^a   Phillips, W ^a   Plano, M A ^a   Moyer, M D ^a   Moreno, M A ^a  

^a WASHINGTON STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRON TRANSPORT PROPERTIES; PHOTOEMISSION; POLYCRYSTALLINE MATERIALS; SEMICONDUCTOR DOPING; SINGLE CRYSTALS; SURFACE TREATMENT;

BAND BENDING; NEGATIVE ELECTRON AFFINITY (NEA) DIAMONDS;

SEMICONDUCTING DIAMONDS;

EID: 0030394995     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-423-771     Document Type: Conference Paper

References (16)