Optically stimulated deep-level impedance spectroscopy: Application to an n-GaAs Schottky diode

Journal of the Electrochemical Society

Volumn 143, Issue 12, 1996, Pages 4074-4079

  Jansen, Andrew N ^a,b,c   Orazem, Mark E ^a,c  

^a University of Florida   (United States)

^b ARGONNE NATIONAL LABORATORY   (United States)

^c ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC IMPEDANCE; ELECTRON ENERGY LEVELS; ELECTRON TRANSITIONS; MATHEMATICAL MODELS; REGRESSION ANALYSIS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM ARSENIDE;

SUB BANDGAP ILLUMINATION; THERMALLY STIMULATED DEEP LEVEL IMPEDANCE SPECTROSCOPY;

SPECTROSCOPY;

EID: 0030394932     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837338     Document Type: Article

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