Dissociative adsorption of O2 and H2O on Si(113): Chemical shifts of the Si 2p level

Surface Science

Volumn 369, Issue 1-3, 1996, Pages 117-125

  Scholz, S M ^a   Jacobi, K ^a  

^a FRITZ HABER INSTITUT DER MAX PLANCK GESELLSCHAFT   (Germany)

Author keywords

Hydrogen; Oxidation; Oxygen; Photoelectron spectroscopy; Silicon; Silicon oxides; Surface chemical reaction; Surface electronic phenomena; Surface relaxation and reconstruction; Thermal desorption; Water; Wetting

Indexed keywords

ANNEALING; BINDING ENERGY; DISSOCIATION; FERMI LEVEL; GAS ABSORPTION; OXYGEN; PHOTOELECTRON SPECTROSCOPY; PYROLYSIS; SEMICONDUCTOR DEVICE MODELS; WATER;

DIMERS; DISSOCIATIVE ABSORPTION; SILICON OXIDES; SURFACE RECONSTRUCTION; VALENCE BAND;

SEMICONDUCTING SILICON;

EID: 0030394464     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(96)00882-5     Document Type: Article

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