|
Volumn 420, Issue , 1996, Pages 357-362
|
Influence of hydrogen dilution and substrate temperature in hot-wire deposition of amorphous and microcrystalline silicon with filament temperatures between 1900 and 2500°C
a a a a |
Author keywords
[No Author keywords available]
|
Indexed keywords
AMORPHOUS SILICON;
CHEMICAL VAPOR DEPOSITION;
FILM GROWTH;
HYDROGEN;
OPTICAL PROPERTIES;
RAMAN SPECTROSCOPY;
SILANES;
THERMAL EFFECTS;
THIN FILMS;
TUNGSTEN;
HOT WIRE DEPOSITION;
HYDROGEN DILUTION;
MICROCRYSTALLINE FILMS;
SUBSTRATE TEMPERATURE;
TUNGSTEN FILAMENTS;
AMORPHOUS FILMS;
|
EID: 0030394254
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1557/proc-420-357 Document Type: Conference Paper |
Times cited : (4)
|
References (12)
|