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Volumn , Issue , 1996, Pages 27-32
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SiGe BJTs for low-voltage power applications
a a a a a a
a
M/A COM
(United States)
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Author keywords
[No Author keywords available]
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Indexed keywords
BANDWIDTH;
ELECTRIC BREAKDOWN OF SOLIDS;
GAIN MEASUREMENT;
NATURAL FREQUENCIES;
POWER AMPLIFIERS;
SEMICONDUCTING SILICON COMPOUNDS;
BIPOLAR JUNCTION TRANSISTORS (BJT);
BIPOLAR TRANSISTORS;
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EID: 0030392814
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (1)
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References (3)
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