Chemical properties of a-Si:H interface layers on oxide-covered and hydrogen-terminated silicon

Materials Research Society Symposium - Proceedings

Volumn 420, Issue , 1996, Pages 455-460

  Knobloch, Juergen ^a   Hess, Peter ^a  

^a UNIVERSITY OF HEIDELBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; CHEMICAL VAPOR DEPOSITION; FILM GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROGEN BONDS; NUCLEATION;

FILM THICKNESS; HYDROGEN BONDING; QUARTZ CRYSTAL MICROBALANCE; REFLECTION ABSORPTION SPECTROSCOPY;

AMORPHOUS SILICON;

EID: 0030392502     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-420-455     Document Type: Conference Paper

References (12)