Experimental analysis of room-temperature optical gain in GaInN/GaN and GaN/AlGaN double heterostructures and quantum wells

Conference Digest - IEEE International Semiconductor Laser Conference

Volumn , Issue , 1996, Pages 151-152

  Hangleiter, A ^a   Frankowsky, G ^a   Haerle, V ^a   Steuber, F ^a   Scholz, F ^a  

^a UNIVERSITY OF STUTTGART   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; HETEROJUNCTIONS; LASERS; LIGHT EMITTING DIODES; NITRIDES; POLARIZATION; SCATTERING; SEMICONDUCTOR QUANTUM WELLS;

AMPLIFIED SPONTANEOUS EMISSION; BAND TO BAND TRANSITION; ELECTRON HOLE PLASMA; EXCITONIC GAIN; EXCITONIC SCATTERING PROCESSES; OPTICAL GAIN; OPTICAL GAIN SPECTROSCOPY; ROOM TEMPERATURE;

LIGHT ABSORPTION;

EID: 0030392218     PISSN: 08999406     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)