W-band InGaAs/InP PIN diode monolithic integrated switches

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 1996, Pages 285-288

  Alekseev, Egor ^a   Pavlidis, Dimitris ^a   Dickmann, Juergen ^a   Hackbarth, Thomas ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC BREAKDOWN; ELECTRIC LOSSES; EQUIVALENT CIRCUITS; INTEGRATED CIRCUIT LAYOUT; MICROSTRIP LINES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DIODES; TESTING; TRANSMISSION LINE THEORY;

AIRBRIDGE PARASITIC INDUCTANCE; PARASITIC ACCESS RESISTANCE; PARASITIC FRINGING CAPACITANCE; SWITCHING CUTOFF FREQUENCY; THREE DIMENSIONAL ELECTROMAGNETIC SIMULATION; W BAND MONOLITHIC INTEGRATED SWITCHES;

SWITCHES;

EID: 0030391959     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)