Relation between dynamic saturation characteristics and tail current of non-punchthrough IGBT

Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)

Volumn 3, Issue , 1996, Pages 1425-1432

  Yamashita, J ^a   Yamada, T ^a   Uchida, S ^a   Yamaguchi, H ^a   Ishizawa, S ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CHARGE CARRIERS; COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRON ENERGY LEVELS; ELECTRONIC PROPERTIES; MOSFET DEVICES; SEMICONDUCTING FILMS; SEMICONDUCTOR DEVICE STRUCTURES;

DYNAMIC SATURATION; FORWARD VOLTAGE DROP; INSULATED GATE BIPOLAR TRANSISTORS; POWER LOSS CONTRIBUTION; TAIL CURRENT; TEMPERATURE RISE; TURN OFF LOSS;

BIPOLAR TRANSISTORS;

EID: 0030389569     PISSN: 01972618     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)