Characterization of intrinsic thin silicon dioxide breakdown under static and dynamic stress

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 2874, Issue , 1996, Pages 114-124

  Chaparala, Prasad ^a   Suehle, John S ^a  

^a NATIONAL SEMICONDUCTOR CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; TIME DEPENDENT DIELECTRIC BREAKDOWN;

DIELECTRIC PROPERTIES; DYNAMICS; ELECTRIC FIELDS; FAILURE ANALYSIS; RELIABILITY; SEMICONDUCTOR DEVICE MANUFACTURE; SILICA; STRESSES; THERMAL EFFECTS; THIN FILMS;

MICROELECTRONICS;

EID: 0030388671     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (27)