Ohmic contacts to n-type 6H-SiC without post-annealing

Materials Research Society Symposium - Proceedings

Volumn 423, Issue , 1996, Pages 149-154

  Teraji, Tokuyuki ^a   Hara, Shiro ^a   Okushi, Hideyo ^a   Kajimura, Koji ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC CURRENTS; ELECTRODES; EPITAXIAL GROWTH; FERMI LEVEL; INTERFACES (MATERIALS); SCHOTTKY BARRIER DIODES; SEMICONDUCTING FILMS; SEMICONDUCTOR DEVICE STRUCTURES; SILICON CARBIDE; TITANIUM;

CURRENT TRANSPORT; THERMIONIC EMISSIONS;

OHMIC CONTACTS;

EID: 0030387826     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-423-149     Document Type: Conference Paper

References (15)