High deposition rate a-Si:H for the flat panel display industry

Materials Research Society Symposium - Proceedings

Volumn 424, Issue , 1996, Pages 9-18

  Hautala, J ^a   Saleh, Z ^a   Westendorp, J F M ^a   Meiling, H ^a   Sherman, S ^a   Wagner, S ^a  

^a Tokyo Electron America   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; ELECTRIC PROPERTIES; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROGENATION; LIQUID CRYSTAL DISPLAYS; OPTOELECTRONIC DEVICES; PHOTOCONDUCTIVITY; PLASMA APPLICATIONS; QUALITY CONTROL; SEMICONDUCTOR DEVICE STRUCTURES;

FLAT PANEL DISPLAYS; HYDROGENATED AMORPHOUS SILICON; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD); RADIO FREQUENCY (RF) POWER;

THIN FILM TRANSISTORS;

EID: 0030387792     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-424-9     Document Type: Conference Paper

References (14)