Room temperature quantum dot lasers: From basic experiments to first device oriented structures

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

Volumn 1, Issue , 1996, Pages 320-321

  Zaitsev, S V ^a   Gordeev, N Yu ^a   Ustinov, V M ^a   Zhukov, A E ^a   Egorov, A Yu ^a   Kochnev, I V ^a   Ledentsov, N N ^a   Maximov, M V ^a   Kop'ev, P S ^a   Alferov, Zh I ^a   Bimberg, D ^a  

^a RUSSIAN ACADEMY OF SCIENCES   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS; THERMAL EFFECTS;

NONRADIATIVE RECOMBINATION; QUANTUM DOT HETEROSTRUCTURE LASERS; THRESHOLD CURRENT DENSITY;

SEMICONDUCTOR LASERS;

EID: 0030387478     PISSN: 10928081     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/leos.1996.565261     Document Type: Conference Paper

References (3)