BESS: A Source Structure that Fully Suppresses the Floating Body Effects in SO1 CMOSFETs

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1996, Pages 121-124

  Horiuchi, Masatada ^a   Tmura, Masao ^b  

^a HITACHI LTD   (Japan)

^b JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BULK DEVICES; CMOSFETS; DRAIN-INDUCED BARRIER LOWERING; FLOATING BODY EFFECT; PROPERTY; RECOMBINATION CENTRES; SOLID PHASE EPITAXIAL; SOURCE JUNCTIONS; SOURCE-DRAIN;

AMORPHIZATION; ANNEALING; COMPUTER SIMULATION; ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; EPITAXIAL GROWTH; INTERFACES (MATERIALS); ION IMPLANTATION; OXIDES; POLYCRYSTALLINE MATERIALS; SEMICONDUCTOR DEVICE STRUCTURES; SILICON ON INSULATOR TECHNOLOGY;

BIPOLAR EMBEDDED SOURCE STRUCTURE; FLOATING BODY EFFECTS; HOLE CURRENT PROPERTIES; RECOMBINATION CENTER;

MOSFET DEVICES;

EID: 0030386835     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1996.553136     Document Type: Conference Paper

References (5)

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2. M. Horiuchi, T. Teshima, K. Tokumasu and K. Yamaguchi, '!High-current, small parasitic capacitance MOSFET on a poly-Si interlayered (PSI: Y) SO1 wafer", Symp. VLSI Tech. p. 33 (1995).
3. H. Card and E. Yang, "Electronic processes at grain boundaries in poly-crystalline semiconductors under optical illumination", IEEE Trans. Electron Devices, ED-24, p. 397 (1977).
4. M. Yoshimi, M. Terauchi, A. Murakoshi, M. Takahashi, K. Matsuzawa, N. Shigyo and Y. Ushiku, 'Technology trends of Silicon-On-Insulator -Its advantages and problems to be solved-", Tech. Dig. IEDM, p. 429 (1994).
5. T. Ohno, M. Takahashi, A. Ohtaka, Y. Sakakibara and T. Tsuchiya, "Suppression of the parasitic bipolar effect in ultra-thin-film nMOSFETdSIMOX by Ar ion implantation into source/drain regions", Tech. Dig. IEDM, p. 627 (1995).