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3743152252
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While many authors prefer to use the term grain to refer to a collection of crystallites, such as found in a powder particle, we shall use grain synonymously with crystallite to refer to the individual crystalline components in a polycrystalline sample that are bounded by grain boundaries. Grains (crystallites) are not necessarily single crystalline, as they may contain all defects of lower dimensionality (vacancies dislocations, stacking faults, twins, etc.) other than grain boundaries
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While many authors prefer to use the term grain to refer to a collection of crystallites, such as found in a powder particle, we shall use grain synonymously with crystallite to refer to the individual crystalline components in a polycrystalline sample that are bounded by grain boundaries. Grains (crystallites) are not necessarily single crystalline, as they may contain all defects of lower dimensionality (vacancies dislocations, stacking faults, twins, etc.) other than grain boundaries.
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Proceedings of the NANO conferences are published in Nanostructured Materials.
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Nanostructured Materials
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Proceedings of the ISMANAM conferences
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Proceedings of the ISMANAM conferences are published in Materials Science Forum.
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Materials Science Forum
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Klug, H.P.1
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3743125616
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Although Eq. (13) was derived for the case of a distribution of spheres, it holds for any collection of items all having the same shape
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Although Eq. (13) was derived for the case of a distribution of spheres, it holds for any collection of items all having the same shape.
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3743134626
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Kraack, M.1
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Since electrical conduction in Pd involves both s and d-bands, two mean-free-path values should be used to describe the resistivity of Pd [53]. The mean free path in the d-band is 5 to 10 times smaller than that in the s-band [53], however, so we do not expect scattering of the carriers in the d-band to be as sensitive to the presence of grain boundaries as are the carriers in the s-band. Our assumed mean free path of 30 nm is appropriate for the s-band electrons in Pd at 100 K
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Since electrical conduction in Pd involves both s and d-bands, two mean-free-path values should be used to describe the resistivity of Pd [53]. The mean free path in the d-band is 5 to 10 times smaller than that in the s-band [53], however, so we do not expect scattering of the carriers in the d-band to be as sensitive to the presence of grain boundaries as are the carriers in the s-band. Our assumed mean free path of 30 nm is appropriate for the s-band electrons in Pd at 100 K.
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edited by H. Beck and H.-J. Güntherodt Springer-Verlag, Berlin
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K. Samwer, H. J. Fecht and W. L. Johnson, in Glassy Metals III: Amorphization Techniques, Catalysis, Electronic and Ionic Structure, edited by H. Beck and H.-J. Güntherodt (Springer-Verlag, Berlin, 1995), pp. 5-68.
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2, where r is the distance from the defect
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2, where r is the distance from the defect.
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3743146638
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edited by R. W. Cahn and P. Haasen North-Holland, Amsterdam
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Calm, R.W.1
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