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Volumn 225-227, Issue PART 1, 1996, Pages 263-274

Investigations of grain-boundary structure and stability in nanocrystalline Pd

Author keywords

Grain Boundary Properties; Grain Boundary Resistivity; Nanocrystalline Materials; Nanocrystalline Amorphous Transition

Indexed keywords

AMORPHIZATION; ELECTRIC RESISTANCE; GRAIN BOUNDARIES; PALLADIUM; PHASE TRANSITIONS; POLYCRYSTALLINE MATERIALS;

EID: 0030386545     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Article
Times cited : (11)

References (56)
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    • While many authors prefer to use the term grain to refer to a collection of crystallites, such as found in a powder particle, we shall use grain synonymously with crystallite to refer to the individual crystalline components in a polycrystalline sample that are bounded by grain boundaries. Grains (crystallites) are not necessarily single crystalline, as they may contain all defects of lower dimensionality (vacancies dislocations, stacking faults, twins, etc.) other than grain boundaries
    • While many authors prefer to use the term grain to refer to a collection of crystallites, such as found in a powder particle, we shall use grain synonymously with crystallite to refer to the individual crystalline components in a polycrystalline sample that are bounded by grain boundaries. Grains (crystallites) are not necessarily single crystalline, as they may contain all defects of lower dimensionality (vacancies dislocations, stacking faults, twins, etc.) other than grain boundaries.
  • 4
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    • Delhez, R.1    De Keijser, T.H.2    Mittemeijer, E.J.3
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    • Although Eq. (13) was derived for the case of a distribution of spheres, it holds for any collection of items all having the same shape
    • Although Eq. (13) was derived for the case of a distribution of spheres, it holds for any collection of items all having the same shape.
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    • Since electrical conduction in Pd involves both s and d-bands, two mean-free-path values should be used to describe the resistivity of Pd [53]. The mean free path in the d-band is 5 to 10 times smaller than that in the s-band [53], however, so we do not expect scattering of the carriers in the d-band to be as sensitive to the presence of grain boundaries as are the carriers in the s-band. Our assumed mean free path of 30 nm is appropriate for the s-band electrons in Pd at 100 K
    • Since electrical conduction in Pd involves both s and d-bands, two mean-free-path values should be used to describe the resistivity of Pd [53]. The mean free path in the d-band is 5 to 10 times smaller than that in the s-band [53], however, so we do not expect scattering of the carriers in the d-band to be as sensitive to the presence of grain boundaries as are the carriers in the s-band. Our assumed mean free path of 30 nm is appropriate for the s-band electrons in Pd at 100 K.
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    • 2, where r is the distance from the defect
    • 2, where r is the distance from the defect.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.