Grain boundaries in silicon: microstructure and minority carrier recombination

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 1996, Pages 473-476

  Krinke, J ^a   Albrecht, M ^a   Dorsch, W ^a   Voigt, A ^a   Strunk, H P ^a   Steiner, B ^a   Wagner, G ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL MICROSTRUCTURE; CRYSTAL SYMMETRY; ELECTRIC PROPERTIES; ELECTRON BEAMS; GRAIN BOUNDARIES; LIQUID PHASE EPITAXY; SILICON WAFERS; SUBSTRATES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRON BEAM INDUCED CURRENT; MINORITY CARRIER RECOMBINATION; MULTICRYSTALLINE CAST SILICON WAFERS;

SEMICONDUCTING SILICON;

EID: 0030386366     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/pvsc.1996.564046     Document Type: Conference Paper

References (16)