Analysis of floating-body-induced leakage current in 0.15 μm SOI DRAM

IEEE International SOI Conference

Volumn , Issue , 1996, Pages 138-139

  Terauchi, Mamoru ^a   Yoshimi, Makoto ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DATA STORAGE EQUIPMENT; DIFFERENTIAL EQUATIONS; LEAKAGE CURRENTS; MATHEMATICAL MODELS; SILICON ON INSULATOR TECHNOLOGY;

DYNAMIC RANDOM ACCESS MEMORY (DRAM); DYNAMIC RETENTION TIME; FLOATING BODY INDUCED LEAKAGE CURRENT;

RANDOM ACCESS STORAGE;

EID: 0030385812     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)