Influence of the cabling geometry on paralleled diodes in a high power rectifier

Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)

Volumn 2, Issue , 1996, Pages 993-998

  Clavel, E ^a   Roudet, J ^a   Schanen, J L ^a   Fontanet, A ^a  

^a LABORATOIRE D ELECTROTECHNIQUE DE GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER AIDED NETWORK ANALYSIS; COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRIC WIRING; LUMPED PARAMETER NETWORKS; MATHEMATICAL MODELS; SEMICONDUCTOR DIODES;

CABLING GEOMETRY; HIGH POWER RECTIFIER; PARALLELED DIODES;

ELECTRIC RECTIFIERS;

EID: 0030385592     PISSN: 01972618     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)