SrTiO3 capacitor with relative dielectric constant of 200 on GaAs substrate at microwave frequency

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 12 B, 1996, Pages

  Nishimura, Takeshi B ^a   Iwata, Naotaka ^a   Takemura, Koichi ^a   Kuzuhara, Masaaki ^a   Miyasaka, Yoichi ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC FILMS; ELECTRODES; MICROWAVES; MIM DEVICES; PERMITTIVITY; SEMICONDUCTING GALLIUM ARSENIDE; SPUTTER DEPOSITION; STRONTIUM COMPOUNDS;

ION MILLING; METAL STRUCTURE; OHMIC RESISTANCE; THIN FILM CAPACITOR;

CAPACITORS;

EID: 0030385301     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.l1683     Document Type: Article

References (5)