In-situ control in zone-melting recrystallization process for formation of high-quality thin film polycrystalline Si

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 1996, Pages 481-484

  Kawama, Y ^a   Takami, A ^a   Naomoto, H ^a   Hamamoto, S ^a   Ishihara, T ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAMERAS; CARRIER CONCENTRATION; CHARGE COUPLED DEVICES; DISLOCATIONS (CRYSTALS); HEATING EQUIPMENT; POLYCRYSTALLINE MATERIALS; QUALITY CONTROL; RECRYSTALLIZATION (METALLURGY); SUBSTRATES; TEMPERATURE CONTROL; THIN FILMS; ZONE MELTING;

DISLOCATION DENSITY; IN SITU CONTROL; THIN FILM POLYCRYSTALLINE SILICON; ZONE MELTING RECRYSTALLIZATION PROCESS;

SEMICONDUCTING SILICON;

EID: 0030385114     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/pvsc.1996.564048     Document Type: Conference Paper

References (9)