A high-performance thin-film transistor with a vertical offset structure

IEEE Electron Device Letters

Volumn 17, Issue 12, 1996, Pages 572-574

  Chang, Chun Yen ^a,b   Lin, Chiung Wei ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b IEEE

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CRYSTALLINE MATERIALS; FABRICATION; LOW TEMPERATURE OPERATIONS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; THIN FILMS;

MICROCRYSTALLINE SILICON; VERTICAL OFF SET STRUCTURE;

THIN FILM TRANSISTORS;

EID: 0030384982     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.545774     Document Type: Article

References (11)

1. N. Ibaraki, "Technical issues for 40-inch a-Si:H TFT," in AM-LCD'95 Dig., Japan, 1995, pp. 67-70.
2. Y. Tsuji, M. Ikeda, Y. Ogawa, and K. Suzuki, "Low resistance Mo-W gate linematerial for a-Si:H TFT-LCD's," in AM-LCD'95 Dig., Japan, 1995, pp. 71-74.
3. Y. Kaneko, K. Tsutsui, H. Matsumaru, H. Yamamoto, and T. Tsukada, "Amorphorus silicon thin film transistor with a buried double-gate structure," in IEDM Tech. Dig., 1989, pp. 337-340.
4. Y. Uchida and M. Matsumura, "Short channel a-Si:H thin-film MOS transistor," IEEE Trans. Electron Devices, vol. ED-36, pp. 2940-2943, 1984.
5. Y. Uchida, Y. Nara, and M. Matsumura, "Proposed vertical-type amorphous-silicon field-effect transistor," IEEE Electron Device Lett., vol. EDL-5, pp. 105-107, 1984.
6. T. Y. Huang, I. W. Wu, A. G. Lewis, A. Chiang, and R. H. Bruce, "A simple 100-V polysilicon TFT with improved turn-on characteristics," IEEE Electron Device Lett., vol. 11, pp. 244-246, 1990.
7. S. S. He and G. Lucovsky, "A low temperature plasma-assisted deposition process for microcrystalline thin film transistor. TFT's," in Mater. Res. Symp. Proc., 1994, vol. 336, pp. 25-30.
8. K. C. Hsu, B. Y. Chen, H. T. Hsu, K. C. Wang, T. R. Yew, and H. L. Hwang, "Thin film transistor made from hydrogenated microcrystalline silicon," Jpn. J. Appl. Phys., vol. 33, pp. 639-642, 1994.
9. C. W. Liang, W. C. Chiang, and M. S. Feng, "Microcrystallinity of undoped amorphous silicon film and its effects on the transfer characteristics of thin-film transistor," Jpn. J. Appl. Phys., vol. 34, pp. 5943-5948, 1995.
10. C. C. Tsai, G. B. Anderson, and R. Thompson, "Growth of amorphous, microcrystalline, and epitaxial silicon in low temperature plasma deposition," in Mater. Res. Proc., vol. 192, pp. 475-480, 1990.
11. See for example, S. M. Sze, Physics of Semiconductor Devices, 2nd ed. New York: Wiley, 1981, pp. 440, 442, 447.