Complementary high-voltage technology based on n-type CdSe:In and p-Type Ge:Cu thin-film transistors

IEEE Electron Device Letters

Volumn 17, Issue 12, 1996, Pages 581-583

  De Cubber, A M ^a   De Smet, H ^a,b   De Vos, J ^a,b   Carchon, N ^a   Van Calster, A ^a  

^a GHENT UNIVERSITY   (Belgium)

^b IEEE

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; CRYSTALLIZATION; CURRENT VOLTAGE CHARACTERISTICS; GATES (TRANSISTOR); INDIUM; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING GERMANIUM; THIN FILMS;

CADMIUM SELENIDE; DRIVER CIRCUITS; HIGH VOLTAGE TECHNOLOGY; VOLTAGE LEVEL SHIFTERS;

THIN FILM TRANSISTORS;

EID: 0030384981     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.545777     Document Type: Article

References (3)

1. H. De Smet, J. Capon, J. De Bacts, I. De Rycke, J. Doutrelogine, A. Vam Calster, and J. Vanfleteren," Active matrix with integrated drivers on soda-lime glass using poly-CdSe and poly-Ge," J. Soc. Infiom. Display, vol. 1, no. 4, pp. 423-428, 1993.
2. A. Van Calster, A. M. De Cubber, J. De Baets, H. De Smet, and J. Vanfleteren, "A simplified 3-step fabrication scheme for high mobilty AMLCD panels," in 14th Int. Display Research Conf., Monterey, CA. Oct. 1994, pp. 289-290.
3. H. De Smet, J. De Baets, A. M. De Cubber, J. De Vos, A. Van Calster, and J. Vanfleteren, "New model for the characterrization and simulation of TFT's in all operating regions," J. Soc. Inform. Display, vol. 3, no. 3. pp. 119-125, 1995.