A novel polysilicon thin-film transistor With a p-n-p structured gate electrode

IEEE Electron Device Letters

Volumn 17, Issue 12, 1996, Pages 560-562

  Min, Byung Hyuk ^a   Park, Cheol Min ^a   Han, Min Koo ^a  

^a Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODES; FABRICATION; GATES (TRANSISTOR); LEAKAGE CURRENTS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES;

ON OFF CURRENT RATIO; POLYSILICON;

THIN FILM TRANSISTORS;

EID: 0030384711     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.545770     Document Type: Article

References (5)

1. J. G. Fossum, A. Oritz-Conde, H. Shichijo, and S. K. Banerjee, "Anomalous leakage current in LPCVD polysilicon MOSFET's," IEEE Trans, Electron Devices, vol. ED-32, pp. 1878-1884, 1985.
2. K. Nakazawa, K. Tanaka, S. Suyama, K. Kato, and S. Kohda, "Lightly doped drain TFT structure for poly-Si LCD's," in SID'90 Dig., 1990, pp. 311-314.
3. S. Seki, O. Kogure, and B. Tsujiyama, "Laser-recrystallized polycrystalline-silicon thin-film transistors with low leakage current and high switching ratio," IEEE Electron Device Lett., vol. EDL-8, no. 9, pp. 425-427, 1987.
4. B. H. Min, C. M. Park, and M. K. Han, "A novel offset gated polysilicon thin film transistor without an additional offset mask," IEEE Electron Device Lett., vol. 16. no. 5, pp. 161-163, 1995.
5. N. Lifshitz, S. Luryi, M. R. Pinto, and C. S. Rafferty, "Active-gate thin-film transistor," IEEE Electron Device Lett., vol. 14, no. 8, pp. 394-395, 1993.