Use of Di-π-cyclopentadienyl manganese as a dopant source for ZnS in metallorganic chemical vapor deposition

Journal of the Electrochemical Society

Volumn 143, Issue 12, 1996, Pages 4116-4118

  Su, S H ^a   Tsai, P R ^a   Yokoyama, M ^a   Su, Y K ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL STRUCTURE; LUMINESCENT DEVICES; MANGANESE COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; SEMICONDUCTING FILMS; SEMICONDUCTING GLASS; SEMICONDUCTOR DOPING; SUBSTRATES; THERMAL EFFECTS; X RAY DIFFRACTION ANALYSIS;

INDIUM TIN OXIDE COATED GLASS SUBSTRATE; MANGANESE DOPANT;

ZINC SULFIDE;

EID: 0030384552     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837347     Document Type: Article

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