Hot-wire deposited amorphous silicon thin-film transistors

Materials Research Society Symposium - Proceedings

Volumn 420, Issue , 1996, Pages 109-116

  Schropp, R E I ^a   Feenstra, K F ^a   Van Der Werf, C H M ^a   Holleman, J ^a   Meiling, H ^a  

^a UTRECHT UNIVERSITY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; ELECTRIC FIELD EFFECTS; ELECTRON TRANSPORT PROPERTIES; FERMI LEVEL; INTERFACES (MATERIALS); OPTIMIZATION; PLASMA APPLICATIONS; RELIABILITY;

CURRENT CROWDING EFFECTS; FERMI LEVEL SHIFTS; FIELD EFFECT MOBILITY; GATE BIAS; HOT WIRE CHEMICAL VAPOR DEPOSITION;

THIN FILM TRANSISTORS;

EID: 0030384120     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-420-109     Document Type: Conference Paper

References (9)