Nonlinear dependence of μeτe on subgap absorption in pulse and CW light-soaked a-Si:H

Materials Research Society Symposium - Proceedings

Volumn 420, Issue , 1996, Pages 575-580

  Hata, Nobuhiro ^a   Ikeda, Toru ^a   Matsuda, Akihisa ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; ELECTRON ABSORPTION; ELECTRON TRANSPORT PROPERTIES; PARAMAGNETIC RESONANCE;

ANNEALING ENERGY; HYDROGENATED AMORPHOUS SILICON; LIGHT INDUCED DEFECT; NONLINEAR DEPENDENCE; SUBGAP ABSORPTION;

AMORPHOUS SILICON;

EID: 0030384112     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-420-575     Document Type: Conference Paper

References (15)