메뉴 건너뛰기




Volumn 15, Issue 3, 1996, Pages 167-189

Pressure-induced phase transition of crystalline and amorphous silicon and germanium at low temperatures

Author keywords

Amorphization; Germanium; High pressure; Phase transition; Silicon; X ray diffraction

Indexed keywords

AMORPHIZATION; AMORPHOUS SILICON; CRYSTALLINE MATERIALS; GERMANIUM; HIGH PRESSURE EFFECTS IN SOLIDS; SYNCHROTRON RADIATION; THERMAL EFFECTS; X RAY DIFFRACTION ANALYSIS;

EID: 0030383886     PISSN: 08957959     EISSN: None     Source Type: Journal    
DOI: 10.1080/08957959608240470     Document Type: Article
Times cited : (58)

References (30)
  • 2
    • 33748272658 scopus 로고
    • 'Melting ice' I at 77 K and 10 kbar: A new method of making amorphous solids
    • O. Mishima, L. D. Calvert and E. Whalley, 'Melting ice' I at 77 K and 10 kbar: a new method of making amorphous solids, Nature, 310, 393 (1984).
    • (1984) Nature , vol.310 , pp. 393
    • Mishima, O.1    Calvert, L.D.2    Whalley, E.3
  • 4
    • 0000790865 scopus 로고
    • 4: I. A novel crystal-to-amorphous transition studied by X-ray scattering
    • 4: I. A novel crystal-to-amorphous transition studied by X-ray scattering, J. Phys., C18, 789 (1985).
    • (1985) J. Phys. , vol.C18 , pp. 789
    • Fujii, Y.1    Kowaka, M.2    Onodera, A.3
  • 6
    • 0000878557 scopus 로고
    • X-ray diffraction study of sulfer to 32 GPa: Amorphization at 25 GPa
    • H. Luo and A. L. Rouff, X-ray diffraction study of sulfer to 32 GPa: Amorphization at 25 GPa, Phys. Rev., B48, 569 (1993).
    • (1993) Phys. Rev. , vol.B48 , pp. 569
    • Luo, H.1    Rouff, A.L.2
  • 8
    • 0004984885 scopus 로고
    • Optical reflectivity and amorphization of GaAs during decompression from megabar pressure
    • Y. K. Vohra, H. Xai and A. L. Rouff, Optical reflectivity and amorphization of GaAs during decompression from megabar pressure, Appl. Phys. Lett., 57, 2666 (1990).
    • (1990) Appl. Phys. Lett. , vol.57 , pp. 2666
    • Vohra, Y.K.1    Xai, H.2    Rouff, A.L.3
  • 9
    • 0000277497 scopus 로고
    • High pressure phase transition in gallium phosphide: An x-ray-absorption spectroscopy study
    • J. P. Itie, A. Polian and C. Jauberthie-Carillon, High pressure phase transition in gallium phosphide: an x-ray-absorption spectroscopy study, Phys. Rev., B40, 9709 (1989).
    • (1989) Phys. Rev. , vol.B40 , pp. 9709
    • Itie, J.P.1    Polian, A.2    Jauberthie-Carillon, C.3
  • 11
    • 0000939593 scopus 로고
    • Crystal structures at high pressures of metallic modifications of silicon and germanium
    • J. C. Jamieson, Crystal structures at high pressures of metallic modifications of silicon and germanium, Science, 139, 762 (1963).
    • (1963) Science , vol.139 , pp. 762
    • Jamieson, J.C.1
  • 12
    • 0001520459 scopus 로고
    • A new dense form of solid germanium
    • F. P. Bundy and J. S. Kasper, A new dense form of solid germanium, Science, 139, 340 (1963).
    • (1963) Science , vol.139 , pp. 340
    • Bundy, F.P.1    Kasper, J.S.2
  • 13
    • 0001038738 scopus 로고
    • The crystal structures of new forms of silicon and germanium
    • J. S. Kasper and S. M. Richard, The crystal structures of new forms of silicon and germanium, Acta Cryst., 17, 752 (1964).
    • (1964) Acta Cryst. , vol.17 , pp. 752
    • Kasper, J.S.1    Richard, S.M.2
  • 14
  • 15
    • 3743137064 scopus 로고
    • Two new form of silicon
    • R. H. Wentorf Jr. and J. S. Kasper, Two new form of silicon, Science, 139, 338 (1963).
    • (1963) Science , vol.139 , pp. 338
    • Wentorf Jr., R.H.1    Kasper, J.S.2
  • 16
    • 0001303297 scopus 로고
    • Si-III (BC-8) crystal phase of Si and C; structural properties, phase stabilities, and phase transitions
    • M. T. Yin, Si-III (BC-8) crystal phase of Si and C; structural properties, phase stabilities, and phase transitions, Phys. Rev., B30, 1773 (1984).
    • (1984) Phys. Rev. , vol.B30 , pp. 1773
    • Yin, M.T.1
  • 17
    • 0015094893 scopus 로고
    • High-pressure equation of state for NaCl, KCl and CsCl
    • D. L. Decker, High-pressure equation of state for NaCl, KCl and CsCl, J.Appl Phys., 42, 3239 (1971).
    • (1971) J.Appl Phys. , vol.42 , pp. 3239
    • Decker, D.L.1
  • 18
    • 0022282817 scopus 로고
    • High pressure and low temperature experiments using synchrotron radiation
    • ed. by S. Minomura, KTK, Tokyo
    • K. Tsuji, High pressure and low temperature experiments using synchrotron radiation, in Solid State Physics under Pressure, ed. by S. Minomura, (KTK, Tokyo, 1985), p. 375.
    • (1985) Solid State Physics under Pressure , pp. 375
    • Tsuji, K.1
  • 19
    • 0021481704 scopus 로고
    • Phases of silicon at high pressure
    • J. Z. Hu and I. L. Spain, Phases of silicon at high pressure, Solid State Commun., 51, 263 (1984).
    • (1984) Solid State Commun. , vol.51 , pp. 263
    • Hu, J.Z.1    Spain, I.L.2
  • 20
    • 0542443423 scopus 로고
    • Structural phase transition in Si and Ge under pressures up to 50 GPa
    • H. Olijnyk, S. K. Sikka and W. B. Holzapfel, Structural phase transition in Si and Ge under pressures up to 50 GPa, Phys. Lett., 103A, 137 (1984).
    • (1984) Phys. Lett. , vol.103 A , pp. 137
    • Olijnyk, H.1    Sikka, S.K.2    Holzapfel, W.B.3
  • 21
    • 33646256260 scopus 로고
    • Crystal data for high-pressure phases of silicon
    • J. Z. Hu, L. D. Merkle, C. S. Menomi and I. L. Spain, Crystal data for high-pressure phases of silicon, Phys. Rev., B34, 4679 (1986).
    • (1986) Phys. Rev. , vol.B34 , pp. 4679
    • Hu, J.Z.1    Merkle, L.D.2    Menomi, C.S.3    Spain, I.L.4
  • 22
    • 85033817344 scopus 로고    scopus 로고
    • note
    • The pressure variation of the d-spacings of the β-Sn type structure for c-Si are obtained experimentally as follows. With increasing pressure at 300 K, c-Si transformed into the β-Sn structure. The β-Sn phase was cooled down to 100 K around 12 GPa and then pressure was released at 100 K. In the decompression process, the diffraction patterns were measured to obtain the pressure variation of the d-spacings of the β-Sn type structure for c-Si.
  • 24
    • 3042905492 scopus 로고
    • Ph. D. Thesis, Osaka University, Osaka, Japan
    • O. Shimomura, Ph. D. Thesis, (Osaka University, Osaka, Japan, 1977).
    • (1977)
    • Shimomura, O.1
  • 25
    • 0002257426 scopus 로고
    • Pressure-induced transitions in amorphous silicon and germanium
    • S. Minomura, Pressure-induced transitions in amorphous silicon and germanium. J. Phys. (Paris), G12, C4-181 (1981).
    • (1981) J. Phys. (Paris) , vol.G12
    • Minomura, S.1
  • 26
    • 0021656933 scopus 로고
    • Pressure effects on the local atomic structure
    • S. Minomura, Pressure effects on the local atomic structure, Semiconductors and Semimetals, 21A, 273 (1984).
    • (1984) Semiconductors and Semimetals , vol.21 A , pp. 273
    • Minomura, S.1
  • 27
    • 0000549486 scopus 로고
    • High-pressure transitions of germanium and a new high-pressure form of germanium
    • C. Bates, F. Dachille and R. Roy, High-pressure transitions of germanium and a new high-pressure form of germanium, Science, 147, 860 (1965).
    • (1965) Science , vol.147 , pp. 860
    • Bates, C.1    Dachille, F.2    Roy, R.3
  • 28
    • 85033821650 scopus 로고    scopus 로고
    • Private Communication
    • O. Shimomura, Private Communication.
    • Shimomura, O.1
  • 29
    • 0017216686 scopus 로고
    • The structure of liquid transition metals and their alloys
    • Y. Waseda, The structure of liquid transition metals and their alloys, Inst. Phys. Conf. Ser., 30, 230 (1977).
    • (1977) Inst. Phys. Conf. Ser. , vol.30 , pp. 230
    • Waseda, Y.1
  • 30
    • 0027109597 scopus 로고
    • Amorphization from the quenched highpressure phase of silicon and germanium
    • M. Imai, K. Yaoita, Y. Katayama, J. Q. Chen and K. Tsuji, Amorphization from the quenched highpressure phase of silicon and germanium, J. Non-Cryst. Solids, 150, 49 (1992).
    • (1992) J. Non-Cryst. Solids , vol.150 , pp. 49
    • Imai, M.1    Yaoita, K.2    Katayama, Y.3    Chen, J.Q.4    Tsuji, K.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.